Datasheet > SI7615CDN

SI7615CDN

更新时间： 2024-11-22 01:23:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	644K
描述
P-Channel 20 V (D-S) MOSFET

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SI7615CDN 数据手册

Si7615CDN

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen III p-channel power MOSFET

PowerPAK^®1212-8 Single

• R_DS(on)rating at V_GS= -1.8 V

• 100 % R_gand UIS tested

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Battery management in mobile devices

• Battery switch

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= -4.5 V

• Load switch

-20

0.0090

0.0100

0.0117

0.0203



_DS(on)max. () at V_GS= -3.7 V

_DS(on)max. () at V_GS= -2.5 V

R_DS(on)max. () at V_GS= -1.8 V

Q_gtyp. (nC)

P-Channel MOSFET



_D(A) ^{a, g}

-35

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK 1212-8

Si7615CDN-T1-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-35 ^a

-16.3 ^{b, c}

-13 ^{b, c}

-80

-27.4

-3 ^{b, c}

-20

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

21.1

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.6 ^{b, c}

2.3 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

3.8

°C/W

2.9

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 81 °C/W.

g. T_C= 25 °C.

S16-1778-Rev. A, 05-Sep-16

Document Number: 77771

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与SI7615CDN相关器件

型号	品牌	获取价格	描述	数据表
SI7615DN	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7615DN-T1-GE3	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7617DN	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI7617DN_15	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI7617DN-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
Si7619DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
Si7620DN	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7620DN-T1-GE3	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7621DN-T1-GE3	VISHAY	获取价格	MOSFET P-CH 20V 4A 1212-8 PPAK
SI7623DN	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET

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