5秒后页面跳转
SI7615DN PDF预览

SI7615DN

更新时间: 2024-11-25 09:25:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 580K
描述
P-Channel 20-V (D-S) MOSFET

SI7615DN 数据手册

 浏览型号SI7615DN的Datasheet PDF文件第2页浏览型号SI7615DN的Datasheet PDF文件第3页浏览型号SI7615DN的Datasheet PDF文件第4页浏览型号SI7615DN的Datasheet PDF文件第5页浏览型号SI7615DN的Datasheet PDF文件第6页浏览型号SI7615DN的Datasheet PDF文件第7页 
New Product  
Si7615DN  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
TrenchFET Gen III P-Channel Power MOSFET  
100 % Rg Tested  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
Qg (Typ.)  
- 35a  
- 35a  
- 35a  
®
0.0039 at VGS = - 10 V  
0.0055 at VGS = - 4.5 V  
0.0098 at VGS = - 2.5 V  
- 20  
62 nC  
100 % UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
®
PowerPAK 1212-8  
Adaptor Switch  
Battery Switch  
Load Switch  
S
3.30 mm  
3.30 mm  
1
S
S
2
S
3
G
4
D
8
G
D
7
D
6
D
5
Bottom View  
Ordering Information: Si7615DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
D
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 20  
12  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
- 35a  
- 35a  
- 22.6b, c  
- 18.2b, c  
- 80  
- 35a  
- 3.3b, c  
- 20  
20  
52  
33  
3.7b, c  
2.4b, c  
- 55 to 150  
260  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
Pulsed Drain Current  
IDM  
IS  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
T
T
C = 25 °C  
C = 70 °C  
Maximum Power Dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
26  
Maximum  
Unit  
t 10 s  
33  
°C/W  
Steady State  
RthJC  
1.9  
2.4  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 81 °C/W.  
Document Number: 64722  
S09-1224-Rev. C, 29-Jun-09  
www.vishay.com  
1

与SI7615DN相关器件

型号 品牌 获取价格 描述 数据表
SI7615DN-T1-GE3 VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI7617DN VISHAY

获取价格

P-Channel 30-V (D-S) MOSFET
SI7617DN_15 VISHAY

获取价格

P-Channel 30-V (D-S) MOSFET
SI7617DN-T1-GE3 VISHAY

获取价格

P-Channel 30-V (D-S) MOSFET
Si7619DN VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
Si7620DN VISHAY

获取价格

N-Channel 150-V (D-S) MOSFET
SI7620DN-T1-GE3 VISHAY

获取价格

N-Channel 150-V (D-S) MOSFET
SI7621DN-T1-GE3 VISHAY

获取价格

MOSFET P-CH 20V 4A 1212-8 PPAK
SI7623DN VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI7625DN VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET