5秒后页面跳转
SI7623DN PDF预览

SI7623DN

更新时间: 2024-11-22 01:25:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 580K
描述
P-Channel 20-V (D-S) MOSFET

SI7623DN 数据手册

 浏览型号SI7623DN的Datasheet PDF文件第2页浏览型号SI7623DN的Datasheet PDF文件第3页浏览型号SI7623DN的Datasheet PDF文件第4页浏览型号SI7623DN的Datasheet PDF文件第5页浏览型号SI7623DN的Datasheet PDF文件第6页浏览型号SI7623DN的Datasheet PDF文件第7页 
New Product  
Si7623DN  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
®
TrenchFET Gen III P-Channel Power MOSFET  
VDS (V)  
RDS(on) () Max.  
ID (A)  
Qg (Typ.)  
100 % Rg and UIS Tested  
- 35a  
- 35a  
- 35a  
0.0038 at VGS = - 10 V  
0.0053 at VGS = - 4.5 V  
0.0090 at VGS = - 2.5 V  
Material categorization:  
- 20  
55.5 nC  
For definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
®
PowerPAK 1212-8  
S
Adaptor Switch  
Battery Switch  
Load Switch  
S
3.3 mm  
3.3 mm  
1
S
2
S
Charger Switch  
G
3
G
4
D
8
D
7
D
6
D
5
D
Bottom View  
Ordering Information:  
Si7623DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
12  
- 35a  
- 35a  
- 22.6b, c  
- 18.2b, c  
- 80  
- 35a  
- 3.3b, c  
- 20  
20  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
Pulsed Drain Current (t = 300 µs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
Avalanche Current  
IAS  
L = 0.1 mH  
Single Pulse Avalanche Energy  
EAS  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
52  
33  
Maximum Power Dissipation  
PD  
3.7b, c  
2.4b, c  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
26  
Maximum  
Unit  
t 10 s  
33  
°C/W  
Steady State  
RthJC  
1.9  
2.4  
Notes:  
a. Package limited.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 81 °C/W.  
Document Number: 62668  
S12-1764-Rev. A, 23-Jul-12  
For technical questions, contact: pmostechsupport@vishay.com  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SI7623DN相关器件

型号 品牌 获取价格 描述 数据表
SI7625DN VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SI7625DN-T1-GE3 VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SI7629DN VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SI7629DN-T1-GE3 VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
SI7633DP-T1-GE3 VISHAY

获取价格

Trans MOSFET P-CH 20V 34A 8-Pin PowerPAK SO T/R
SI7634BDP VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-E3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634BDP-T1-GE3 VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET
SI7634DP-T1-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7636DP VISHAY

获取价格

N-Channel 30-V (D-S) MOSFET