Datasheet > SI7617DN_15

SI7617DN_15

更新时间： 2024-02-11 00:23:24

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	611K
描述
P-Channel 30-V (D-S) MOSFET

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SI7617DN_15 数据手册

Si7617DN

Vishay Siliconix

www.vishay.com

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Material categorization:

V_DS(V)

R_DS(on)(Ω)

I_D(A) ^{d, g}

-35

Q_g(TYP.)

0.0123 at V_GS= -10 V

0.0222 at V_GS= -4.5 V

-30

20.5 nC

-35

for definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK^®1212-8 Single

APPLICATIONS

• Notebook battery charging

• Notebook adapter switch

Top View

Bottom View

P-Channel MOSFET

Ordering Information:

Si7617DN-T1-GE3 (Lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

-35 ^d

-13.9 ^{a, b}

-11.1 ^{a, b}

-60

-35 ^d

-3 ^{a, b}

-29

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

Avalanche Current

I_AS

L = 0.1 mH

Single-Pulse Avalanche Energy

E_AS

_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.7 ^{a, b}

2.4 ^{a, b}

-55 to +150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^{e, f}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum Junction-to-Ambient ^{a, c}

SYMBOL

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady State

R_thJA

R_thJC

°C/W

Maximum Junction-to-Case

1.9

2.4

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 81 °C/W.

d. Package limited.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

g. Based on T_C= 25 °C.

S15-1032-Rev. B, 04-May-15

Document Number: 65164

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...14

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与SI7617DN_15相关器件

型号	品牌	获取价格	描述	数据表
SI7617DN-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
Si7619DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
Si7620DN	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7620DN-T1-GE3	VISHAY	获取价格	N-Channel 150-V (D-S) MOSFET
SI7621DN-T1-GE3	VISHAY	获取价格	MOSFET P-CH 20V 4A 1212-8 PPAK
SI7623DN	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7625DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7625DN-T1-GE3	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI7629DN	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET
SI7629DN-T1-GE3	VISHAY	获取价格	P-Channel 20 V (D-S) MOSFET

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