Datasheet > SI7611DN

SI7611DN

更新时间： 2024-11-26 01:25:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	578K
描述
P-Channel 40-V (D-S) MOSFET

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SI7611DN 数据手册

New Product

Si7611DN

Vishay Siliconix

P-Channel 40-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free

V_DS(V)

R_DS(on)(Ω)

I_D(A)

Q_g(Typ.)

TrenchFET^®Power MOSFET

- 18^e

Low Thermal Resistance PowerPAK^®

Package with Small Size and Low 1.07 mm

Profile

0.025 at V_GS= - 10 V

0.033 at V_GS= - 4.5V

RoHS

- 40

41 nC

COMPLIANT

•

100 % R_gand UIS Tested

APPLICATIONS

Load Switch

•

PowerPAK 1212-8

3.30 mm

Bottom View

P-Channel MOSFET

Ordering Information: Si7611DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 40

V_GS

- 18^e

- 9.3^{a, b}

- 7.4^{a, b}

- 20

- 18^e

- 3^{a, b}

- 23

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

P_D

Maximum Power Dissipation

3.7^{a, b}

2.4^{a, b}

- 50 to 150

260

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

°C

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Package limited.

Document Number: 69939

S-80895-Rev. B, 21-Apr-08

www.vishay.com

12 3 4 5 6 7...13

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