New Product
Si7469DP
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
- 28
0.025 at VGS = - 10 V
0.029 at VGS = - 4.5 V
- 80
55 nC
RoHS
- 28
COMPLIANT
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
Bottom View
Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 80
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 28a
- 28a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
- 10.2b, c
- 8.1b, c
- 40
- 28a
- 4.3b, c
- 45
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
100
83
mJ
W
T
C = 25 °C
TC = 70 °C
A = 25 °C
53
PD
Maximum Power Dissipation
5.2b, c
3.3b, c
T
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 sec
Steady State
19
24
°C/W
RthJC
1.2
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73438
S-71596-Rev. B, 30-Jul-07
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