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SI7469DP-T1-GE3 PDF预览

SI7469DP-T1-GE3

更新时间: 2024-11-02 20:05:27
品牌 Logo 应用领域
威世 - VISHAY 脉冲光电二极管晶体管
页数 文件大小 规格书
13页 309K
描述
Trans MOSFET P-CH 80V 10.2A 8-Pin PowerPAK SO T/R

SI7469DP-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:0.8
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):28 A最大漏极电流 (ID):10.2 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):83 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI7469DP-T1-GE3 数据手册

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Si7469DP  
Vishay Siliconix  
P-Channel 80-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a  
- 28  
Available  
0.025 at VGS = - 10 V  
0.029 at VGS = - 4.5 V  
TrenchFET® Power MOSFET  
- 80  
55 nC  
- 28  
PowerPAK SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
Bottom View  
D
Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free)  
Si7469DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 80  
20  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
- 28a  
- 28a  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 10.2b, c  
- 8.1b, c  
- 40  
- 28a  
- 4.3b, c  
- 45  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
100  
83  
mJ  
W
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
53  
PD  
Maximum Power Dissipation  
5.2b, c  
3.3b, c  
T
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 s  
Steady State  
19  
24  
°C/W  
RthJC  
1.2  
1.5  
Notes:  
a. Package Limited.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under Steady State conditions is 65 °C/W.  
Document Number: 73438  
S09-0271-Rev. C, 16-Feb-09  
www.vishay.com  
1

SI7469DP-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI7469DP-T1-E3 VISHAY

类似代替

P-Channel 80-V (D-S) MOSFET

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