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SI7464DP-E3 PDF预览

SI7464DP-E3

更新时间: 2024-11-02 20:10:47
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 71K
描述
TRANSISTOR 1.8 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

SI7464DP-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.17雪崩能效等级(Eas):0.45 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):1.8 A
最大漏极电流 (ID):1.8 A最大漏源导通电阻:0.24 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-C5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):4.2 W
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7464DP-E3 数据手册

 浏览型号SI7464DP-E3的Datasheet PDF文件第2页浏览型号SI7464DP-E3的Datasheet PDF文件第3页浏览型号SI7464DP-E3的Datasheet PDF文件第4页浏览型号SI7464DP-E3的Datasheet PDF文件第5页浏览型号SI7464DP-E3的Datasheet PDF文件第6页 
Si7464DP  
Vishay Siliconix  
New Product  
N-Channel 200-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKt  
Package with Low 1.07-mm Profile  
D PWM Optimized for Fast Switching  
0.24 @ V = 10 V  
2.8  
2.7  
GS  
200  
0.26 @ V = 6 V  
GS  
APPLICATIONS  
D Primary Side Switch  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
200  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
2.8  
2.2  
3.5  
1.8  
1.5  
1.5  
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Continuous Source Current  
Pulsed Drain Current  
I
S
A
I
8
3
DM  
b
Avalanche Current  
I
AS  
b
Single Avalanche Energy  
E
0.45  
mJ  
AS  
T
= 25_C  
= 70_C  
4.2  
2.6  
1.8  
1.1  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
25  
60  
30  
70  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
2.9  
3.5  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. Guaranteed by design, not subject to production testing.  
Document Number: 72052  
S-22097—Rev. A, 02-Dec-02  
www.vishay.com  
1

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