Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFETs
VDS (V)
RDS(on) (Ω)
ID (A)
18
0.0096 at VGS = 10 V
0.012 at VGS = 4.5 V
•
60
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
16
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
G
5
Bottom View
S
Ordering Information: Si7460DP-T1-E3 (Lead (Pb)-free)
Si7460DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
40
V
VGS
20
TA = 25 °C
A = 70 °C
18
14
11
8
Continuous Drain Current (TJ = 150 °C)a
ID
T
Pulsed Drain Current
IDM
IS
A
Continuous Source Current (Diode Conduction)a
Avalanche Current
4.3
1.6
IAS
50
EAS
Avalanche Energy
125
mJ
W
TA = 25 °C
TA = 70 °C
5.4
3.4
1.9
1.2
Maximum Power Dissipationa
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
18
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
23
65
Maximum Junction-to-Ambienta
RthJA
52
°C/W
RthJC
Maximum Junction-to-Case (Drain)
1.0
1.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72126
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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