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SI7463DP-T1-E3 PDF预览

SI7463DP-T1-E3

更新时间: 2024-02-14 11:57:26
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲PC
页数 文件大小 规格书
5页 67K
描述
P-Channel 40-V (D-S) MOSFET

SI7463DP-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.08Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:242478
Samacsys Pin Count:8Samacsys Part Category:MOSFET (P-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:PowerPAK? SO-8 Single_1
Samacsys Released Date:2019-04-02 15:38:04Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.0092 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XDSO-C5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):5.4 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7463DP-T1-E3 数据手册

 浏览型号SI7463DP-T1-E3的Datasheet PDF文件第2页浏览型号SI7463DP-T1-E3的Datasheet PDF文件第3页浏览型号SI7463DP-T1-E3的Datasheet PDF文件第4页浏览型号SI7463DP-T1-E3的Datasheet PDF文件第5页 
Si7463DP  
Vishay Siliconix  
P-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
0.0092 @ V = 10 V  
18.6  
15  
GS  
40  
APPLICATIONS  
0.014 @ V = 4.5  
V
GS  
D Automotive  
12-V Boardnet  
High-Side Switches  
Motor Drives  
PowerPAK SO-8  
S
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
G
4
D
8
D
7
D
6
D
5
D
Bottom View  
P-Channel MOSFET  
Ordering Information: Si7463DP-T1—E3  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
11  
18.6  
15  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
8.9  
A
Pulsed Drain Current  
I
DM  
60  
a
continuous Source Current (Diode Conduction)  
I
4.5  
5.4  
1.6  
1.9  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
3.4  
1.2  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
18  
52  
23  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.0  
1.3  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72440  
S-32411—Rev. B, 24-Nov-03  
www.vishay.com  
1

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