5秒后页面跳转
SI7456DP-E3 PDF预览

SI7456DP-E3

更新时间: 2024-02-05 11:36:52
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
4页 39K
描述
TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power

SI7456DP-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66雪崩能效等级(Eas):45 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):5.7 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7456DP-E3 数据手册

 浏览型号SI7456DP-E3的Datasheet PDF文件第2页浏览型号SI7456DP-E3的Datasheet PDF文件第3页浏览型号SI7456DP-E3的Datasheet PDF文件第4页 
Si7456DP  
Vishay Siliconix  
New Product  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFETS  
D New Low Thermal Resistance PowerPAKt  
PRODUCT SUMMARY  
Package with Low 1.07-mm Profile  
D PWM Optimized for Fast Switching  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.025 @ V = 10 V  
GS  
9.3  
8.8  
100  
0.028 @ V = 6.0 V  
GS  
D Primary Side Switch for High Density DC/DC  
D Telecom/Server 48-V, Full-/Half-Bridge DC/DC  
D Industrial and 42-V Automotive  
PowerPAKt SO-8  
D
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
S
D
5
N-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
DS  
GS  
V
V
"20  
T
= 25_C  
= 85_C  
9.3  
6.7  
5.7  
4.1  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
40  
30  
45  
DM  
Avalanche Current  
I
AS  
L = 0.1 mH  
Single Avalanche Energy (Duty Cycle v1%)  
Continuous Source Current (Diode Conduction)  
E
AS  
mJ  
A
a
I
S
4.3  
5.2  
2.7  
1.6  
1.9  
1.0  
T
A
= 25_C  
= 85_C  
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
19  
52  
24  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case  
1.5  
1.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71603  
www.vishay.com  
S-03707—Rev. B, 07-May-01  
1

与SI7456DP-E3相关器件

型号 品牌 获取价格 描述 数据表
SI7456DP-T1 VISHAY

获取价格

N-Channel 100-V (D-S) MOSFET
SI7456DP-T1-E3 VISHAY

获取价格

N-Channel 100-V (D-S) MOSFET
SI7457DP-T1-E3 VISHAY

获取价格

MOSFET P-CH D-S 100V PPAK 8SOIC
SI7457DP-T1-GE3 VISHAY

获取价格

P-CHANNEL 100-V (D-S) MOSFET - Tape and Reel
SI7458DP VISHAY

获取价格

N-Channel 20-V (D-S) Fast Switching MOSFET
SI7459DP-T1-E3 VISHAY

获取价格

Trans MOSFET P-CH 30V 13A 8-Pin PowerPAK SO T/R
SI7459DP-T1-GE3 VISHAY

获取价格

P-CH 30-V (D-S) MOSFET - Tape and Reel
SI7460DP VISHAY

获取价格

N-Channel 60-V (D-S) Fast Switching MOSFET
SI7460DP_09 VISHAY

获取价格

N-Channel 60-V (D-S) Fast Switching MOSFET
SI7460DP-T1 VISHAY

获取价格

N-Channel 60-V (D-S) Fast Switching MOSFET