Datasheet > SI7456CDP_17

SI7456CDP_17

更新时间： 2024-11-03 01:13:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	132K
描述
N-Channel 100 V (D-S) MOSFET

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SI7456CDP_17 数据手册

New Product

Si7456CDP

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

27.5

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

100 % UIS Tested

0.0235 at V_GS= 10 V

0.0245 at V_GS= 7.5 V

0.0315 at V_GS= 4.5 V

•

100

7.7 nC

Compliant to RoHS Directive 2002/95/EC

PowerPAK^®SO-8

APPLICATIONS

•

DC/DC Primary Side Switch

Telecom/Server 48 V, Full/Half-Bridge dc-to-dc

Industrial

6.15 mm

5.15 mm

Bottom View

Ordering Information: Si7456CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

100

Unit

V_GS

T_C= 25 °C

27.5

10.3^{b, c}

8.2^{b, c}

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

_C= 25 °C

_A= 25 °C

4.5^{b, c}

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

11.2

35.7

22.8

5.0^{b, c}

3.2^{b, c}

T_C= 70 °C

P_D

Maximum Power Dissipation

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

R_thJA

t ≤ 10 s

°C/W

Steady State

R_thJC

2.9

3.5

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

Document Number: 65941

S10-0785-Rev. A, 05-Apr-10

www.vishay.com

12 3 4 5 6 7

中文翻译

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与SI7456CDP_17相关器件

型号	品牌	获取价格	描述	数据表
SI7456CDP-T1-GE3	VISHAY	获取价格	TRANSISTOR 10.3 A, 100 V, 0.0235 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS
SI7456DDP	VISHAY	获取价格	N-Channel 100 V (D-S) MOSFET
SI7456DDP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 27.8A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon,
SI7456DP	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7456DP_06	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7456DP-E3	VISHAY	获取价格	TRANSISTOR 5.7 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET Gene
SI7456DP-T1	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7456DP-T1-E3	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI7457DP-T1-E3	VISHAY	获取价格	MOSFET P-CH D-S 100V PPAK 8SOIC
SI7457DP-T1-GE3	VISHAY	获取价格	P-CHANNEL 100-V (D-S) MOSFET - Tape and Reel

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