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SI7388DP-T1-GE3 PDF预览

SI7388DP-T1-GE3

更新时间: 2024-11-02 19:51:27
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 138K
描述
N-CH REDUCED QG, FAST SWITCHING MOSFET - Tape and Reel

SI7388DP-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-C8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-C8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):5 W
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7388DP-T1-GE3 数据手册

 浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第2页浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第3页浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第4页浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第5页浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第6页浏览型号SI7388DP-T1-GE3的Datasheet PDF文件第7页 
Si7388DP  
Vishay Siliconix  
N-Channel Reduced Q , Fast Switching MOSFET  
g
FEATURES  
PRODUCT SUMMARY  
Halogen-free available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
19  
TrenchFET® Power MOSFET  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
100 % Rg Tested  
RoHS  
0.007 at VGS = 10 V  
0.010 at VGS = 4.5 V  
COMPLIANT  
30  
15  
APPLICATIONS  
PowerPAK SO-8  
DC/DC Synchronous Rectifier  
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
5
G
Bottom View  
S
N-Channel MOSFET  
Ordering Information: Si7388DP-T1-E3 (Lead (Pb)-free)  
Si7388DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
20  
V
VGS  
TA = 25 °C  
TA = 70 °C  
19  
15  
12  
9
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
50  
4.1  
5
1.6  
1.9  
1.2  
TA = 25 °C  
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
3.2  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
20  
Maximum  
Unit  
t 10 s  
Steady State  
Steady State  
25  
65  
Maximum Junction-to-Ambient (MOSFET)a  
Maximum Junction-to-Case (Drain)  
RthJA  
°C/W  
55  
RthJC  
2.0  
2.6  
Notes:  
a. Surface Mounted on 1” x 1” FR4 board.  
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71919  
S-80438-Rev. E, 03-Mar-08  
www.vishay.com  
1

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