Datasheet > SI7403DN

SI7403DN

更新时间： 2024-11-01 22:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	42K
描述
P-Channel 20-V (D-S) MOSFET

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技术参数
数据手册

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SI7403DN 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.83	Base Number Matches：	1

SI7403DN 数据手册

Si7403DN

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

D TrenchFETr Power MOSFETS: 2.5-V Rated

D New PowerPAKt Package

V_DS(V)

r_DS(on)(W)

I_D(A)

0.1 @ V = –4.5 V

–4.5

–3.8

– Low Thermal Resistance, R_thJC

– Low 1.07-mm Profile

–20

0.135 @ V = –2.5

APPLICATIONS

D Load Switching

D PA Switching

S S

PowerPAKt 1212-8

3.30 mm

P-Channel MOSFET

Bottom View

D D

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

= 25_C

= 85_C

–2.9

–2.1

–4.5

–3.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–20

continuous Source Current (Diode Conduction)

–3.0

3.5

–1.3

1.5

= 25_C

= 85_C

Maximum Power Dissipation

1.9

0.8

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case

4.5

5.6

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71431

S-03390—Rev. A, 02-Apr-01

www.vishay.com

12 3 4

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