Datasheet > SI7409DN

SI7409DN

更新时间： 2024-11-01 22:21:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	46K
描述
P-Channel 30-V (D-S) MOSFET

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SI7409DN 数据手册

Si7409DN

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKt

Package with Low 1.07-mm Profile

V_DS(V)

r_DS(on)(W)

I_D(A)

0.019 @ V = -4.5 V

-11

D V_DSOptimized for Load Switch

APPLICATIONS

-30

0.031 @ V = -2.5

-8.5

D Load Switch

PowerPAKt 1212-8

3.30 mm

P-Channel MOSFET

Bottom View

Ordering Information: Si7409DN-T1

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"12

= 25_C

= 85_C

-7

-5

-11

Continuous Drain Current (T = 150_C)

-7.9

Pulsed Drain Current

-30

continuous Source Current (Diode Conduction)

-3.2

3.8

-1.3

1.5

= 25_C

= 85_C

Maximum Power Dissipation

2.0

0.8

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case

1.9

2.4

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72127

S-03372—Rev. A, 03-Mar-03

www.vishay.com

12 3 4 5

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