SI7413DN-T1-E3

更新时间： 2024-02-12 16:42:07

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威世 - VISHAY		/
页数	文件大小	规格书
5页	71K
描述
P-Channel 20-V (D-S) MOSFET

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替代型号

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SI7413DN-T1-E3 数据手册

Si7413DN

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D New PowerPAKr Package

− Low Thermal Resistance, R_thJC

− Low 1.07-mm Profile

0.015 @ V = −4.5 V

−13.2

−11.4

−9.5

−20

0.020 @ V = −2.5

APPLICATIONS

0.029 @ V = −1.8

D Load Switch

PowerPAK 1212-8

3.30 mm

P-Channel MOSFET

Bottom View

Ordering Information: Si7413DN-T1—E3

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

= 25_C

= 85_C

−8.4

−6.1

−13.2

−9.5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−30

Continuous Source Current (Diode Conduction)

−3.2

3.8

−1.3

1.5

= 25_C

= 85_C

Maximum Power Dissipation

2.0

0.8

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case

1.9

2.4

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72616

S-32519—Rev. A, 08-Dec-03

www.vishay.com

12 3 4 5

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SI7413DN-T1-E3 替代型号

型号	品牌	替代类型	描述	数据表
SIS407DN-T1-GE3	VISHAY	类似代替	P-Channel 20 V (D-S) MOSFET

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