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SI7421DN-T1-GE3 PDF预览

SI7421DN-T1-GE3

更新时间: 2024-01-01 15:17:28
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
12页 536K
描述
P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel

SI7421DN-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:SMALL OUTLINE, S-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):6.4 A最大漏极电流 (ID):6.4 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.6 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7421DN-T1-GE3 数据手册

 浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第2页浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第3页浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第4页浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第5页浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第6页浏览型号SI7421DN-T1-GE3的Datasheet PDF文件第7页 
Si7421DN  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 9.8  
- 7.4  
Available  
0.025 at VGS = - 10 V  
0.043 at VGS = - 4.5 V  
TrenchFET® Power MOSFET  
New PowerPAK® Package  
- Low Thermal Resistance, RthJC  
- Low 1.07 mm Profile  
- 30  
PowerPAK 1212-8  
APPLICATIONS  
Battery Switch  
S
3.30 mm  
3.30 mm  
S
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
Bottom View  
D
Ordering Information: Si7421DN-T1-E3 (Lead (Pb)-free)  
Si7421DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 30  
20  
V
VGS  
TA = 25 °C  
A = 85 °C  
- 9.8  
- 7  
- 6.4  
- 4.6  
- 30  
Continuous Drain Current (TJ = 150 °C)a  
ID  
T
A
IDM  
IS  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
- 3  
3.6  
1.9  
- 1.3  
1.5  
TA = 25 °C  
TA = 85 °C  
Maximum Power Dissipationa  
PD  
W
0.8  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
28  
Maximum  
Unit  
t 10 s  
35  
81  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Case  
RthJA  
Steady State  
Steady State  
65  
°C/W  
RthJC  
2.9  
3.8  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 72416  
S-83051-Rev. D, 29-Dec-08  
www.vishay.com  
1

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