Datasheet > SI7439DP

SI7439DP

更新时间： 2024-02-10 06:24:48

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	58K
描述
P-Channel 150-V (D-S) MOSFET

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SI7439DP 数据手册

Si7439DP

Vishay Siliconix

New Product

P-Channel 150-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

V_DS(V)

r_DS(on)(W)

I_D(A)

D Ultra-Low On-Resistance Critical for Application

D Low Thermal Resistance PowerPAKr

Package with Low 1.07-mm Profile

0.090 @ V = −10 V

−5.2

−5.0

−150

0.095 @ V = −6 V

D 100% R_gand Avalanche Tested

APPLICATIONS

D Active Clamp in Intermediate DC/DC Power

Supplies

PowerPAK SO-8

6.15 mm

5.15 mm

Bottom View

Ordering Information: Si7439DP-T1—E3

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−150

"20

= 25_C

= 70_C

−3.0

−2.4

−5.2

−4.1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−50

Continuous Source Current (Diode Conduction)

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

−4.2

−1.6

−40

L = 0.1 mH

= 25_C

= 70_C

5.4

3.4

1.9

1.2

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Case (Drain)

Notes

1.0

1.5

thJC

Document Number: 73106

S-41526—Rev. A, 16-Aug-04

www.vishay.com

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