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SI7448DP-T1-GE3 PDF预览

SI7448DP-T1-GE3

更新时间: 2024-02-06 14:07:09
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 139K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

SI7448DP-T1-GE3 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-C5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):13.4 A最大漏源导通电阻:0.0065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-C5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):50 A表面贴装:YES
端子面层:PURE MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI7448DP-T1-GE3 数据手册

 浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第2页浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第3页浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第4页浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第5页浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第6页浏览型号SI7448DP-T1-GE3的Datasheet PDF文件第7页 
Si7448DP  
Vishay Siliconix  
N-Channel 20-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Available  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
22  
TrenchFET® Power MOSFET  
0.0065 at VGS = 4.5 V  
0.009 at VGS = 2.5 V  
20  
New Low Thermal Resistance PowerPAK®  
Package with Low 1.07 mm Profile  
19  
100 % Rg Tested  
APPLICATIONS  
Synchronous Rectifier Low Output Voltage  
PowerPAK SO-8  
Portable Computer Battery Selection or Protection  
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
D
4
D
8
D
7
D
6
D
G
5
Bottom View  
S
Ordering Information:  
Si7448DP-T1-E3 (Lead (Pb)-free)  
Si7448DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
20  
50  
V
VGS  
12  
TA = 25°C  
TA = 70°C  
22  
13.4  
10.7  
Continuous Drain Current (TJ = 150°C)a  
ID  
17.6  
A
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
IDM  
IS  
4.3  
5.2  
3.3  
1.6  
1.9  
1.2  
TA = 25°C  
Maximum Power Dissipationa  
W
PD  
T
A = 70°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
19  
Maximum  
Unit  
t 10 s  
Steady State  
Steady State  
24  
65  
Maximum Junction-to-Ambienta  
52  
°C/W  
Maximum Junction-to-Case (Drain)  
RthJC  
1.5  
1.8  
Notes  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71635  
S09-0270-Rev. D, 16-Feb-09  
www.vishay.com  
1

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