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SI7454DP-T1

更新时间: 2024-02-27 17:59:34
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 212K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI7454DP-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.31
配置:Single最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):4.8 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI7454DP-T1 数据手册

 浏览型号SI7454DP-T1的Datasheet PDF文件第2页浏览型号SI7454DP-T1的Datasheet PDF文件第3页浏览型号SI7454DP-T1的Datasheet PDF文件第4页浏览型号SI7454DP-T1的Datasheet PDF文件第5页 
Si7454DP  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS  
VDS (V)  
rDS(on) ()  
ID (A)  
7.8  
Pb-free  
New Low Thermal Resistance PowerPAK®  
Available  
0.034 @ VGS = 10 V  
0.040 @ VGS = 6.0 V  
Package with Low 1.07-mm Profile  
PWM Optimized for Fast Switching  
100 % Rg Tested  
100  
RoHS*  
7.2  
COMPLIANT  
APPLICATIONS  
PowerPAK® SO-8  
Primary Side Switch for High Density DC/DC  
Telecom/Server 48-V, Full-/Half-Bridge DC/DC  
Industrial and 42-V Automotive  
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
D
D
8
D
7
D
6
D
G
5
Bottom View  
S
Ordering Information:  
Si7454DP-T1  
Si7454DP-T1—E3 (Lead (Pb)-Free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
100  
20  
V
TA = 25°C  
TA = 85°C  
7.8  
5.7  
5.0  
3.6  
Continuous Drain Current (TJ = 150°C)a  
ID  
A
Pulsed Drain Current  
IDM  
IAS  
EAS  
IS  
30  
25  
31  
Avalanche Current  
L = 0.1 mH  
TA = 25°C  
Single Avalanche Energy (Duty Cycle 1 %)  
Continuous Source Current (Diode Conduction)a  
mJ  
A
4.0  
4.8  
2.6  
1.6  
1.9  
1.0  
Maximum Power Dissipationa  
PD  
W
T
A = 85°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b,c  
TJ, Tstg  
–55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
21  
55  
Maximum  
Unit  
t 10 sec  
Steady State  
Steady State  
26  
65  
2
Maximum Junction-to-Ambienta  
°C/W  
Maximum Junction-to-Case (Drain)  
RthJC  
1.6  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 71618  
S-51773-Rev. C, 31-Oct-05  
www.vishay.com  
1

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