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SI7415DN-T1-GE3 PDF预览

SI7415DN-T1-GE3

更新时间: 2024-02-19 09:20:45
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
11页 555K
描述
P-Channel 60-V (D-S) MOSFET

SI7415DN-T1-GE3 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, S-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.76Samacsys Description:VISHAY - SI7415DN-T1-GE3 - MOSFET, P CH, 60V, 3.6A, PPAK SO8
其他特性:FAST SWITCHING外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):3.6 A最大漏极电流 (ID):3.6 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.8 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON

SI7415DN-T1-GE3 数据手册

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Si7415DN  
Vishay Siliconix  
P-Channel 60-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 5.7  
- 4.4  
Available  
0.065 at VGS = - 10 V  
0.110 at VGS = - 4.5 V  
TrenchFET® Power MOSFET  
Fast Switching  
- 60  
APPLICATIONS  
Load Switches  
Half-Bridge Motor Drives  
High Voltage Non-Synchronous Buck Converters  
PowerPAK 1212-8  
S
3.30 mm  
3.30 mm  
S
1
S
2
S
3
G
4
D
G
8
D
7
D
6
D
5
Bottom View  
D
Ordering Information: Si7415DN-T1-E3 (Lead (Pb)-free)  
Si7415DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 60  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
- 5.7  
- 4.6  
- 3.6  
- 2.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 30  
Continuous Source Current (Diode Conduction)a  
- 3.2  
3.8  
- 1.3  
1.5  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
2.0  
0.8  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)b, c  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t 10 s  
33  
81  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
65  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
1.9  
2.4  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and  
is not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71691  
S-83043-Rev. E, 22-Dec-08  
www.vishay.com  
1

SI7415DN-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI7415DN-T1-E3 VISHAY

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P-Channel 60-V (D-S) MOSFET

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