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SI7404DN-E3 PDF预览

SI7404DN-E3

更新时间: 2024-11-02 19:57:59
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
12页 551K
描述
TRANSISTOR 8.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET General Purpose Power

SI7404DN-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-XDSO-C5
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
雪崩能效等级(Eas):11 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):8.5 A最大漏极电流 (ID):8.5 A
最大漏源导通电阻:0.013 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.8 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7404DN-E3 数据手册

 浏览型号SI7404DN-E3的Datasheet PDF文件第2页浏览型号SI7404DN-E3的Datasheet PDF文件第3页浏览型号SI7404DN-E3的Datasheet PDF文件第4页浏览型号SI7404DN-E3的Datasheet PDF文件第5页浏览型号SI7404DN-E3的Datasheet PDF文件第6页浏览型号SI7404DN-E3的Datasheet PDF文件第7页 
Si7404DN  
Vishay Siliconix  
N-Channel 30 V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Available  
VDS (V)  
RDS(on) ()  
ID (A)  
13.3  
12.4  
10.2  
0.013 at VGS = 10 V  
0.015 at VGS = 4.5 V  
0.022 at VGS = 2.5 V  
TrenchFET® Power MOSFET  
30  
Compliant to RoHS Directive 2002/95/EC  
APPLICATIONS  
PowerPAK® 1212-8  
Li-lon Battery Protection  
S
3.30 mm  
3.30 mm  
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View  
Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free)  
S
N-Channel MOSFET  
Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
12  
V
VGS  
TA = 25 °C  
13.3  
10.6  
8.5  
6.8  
Continuous Drain Current (TJ = 150 °C)a  
ID  
TA = 70 °C  
A
Pulsed Drain Current  
IDM  
IAS  
EAS  
IS  
40  
15  
11  
Single Avalanche Current  
0.1 mH  
Single Avalanche Energy (Duty Cycle 1 %)  
Continuous Source Current (Diode Conduction)a  
mJ  
A
3.2  
3.8  
2.0  
1.3  
1.5  
0.8  
TA = 25 °C  
A = 70 °C  
Maximum Power Dissipationa  
W
PD  
T
Operating Junction and Storage Temperature Range  
Soldering Recommendationsb,c  
TJ, Tstg  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t 10 s  
33  
81  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
65  
°C/W  
Maximum Junction-to-Case (Drain)  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
RthJC  
1.9  
2.4  
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-  
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
Document Number: 71658  
S11-2045-Rev. G, 17-Oct-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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