SI7401DN-RC

更新时间： 2024-11-02 02:54:19

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R-C Thermal Model Parameters

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SI7401DN-RC 数据手册

Si7401DN_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Foot

N/A

Junction to

RT1

Ambient

4.5197

Case

362.3679 u

504.3467 m

972.1139 m

937.1926 m

RT2

7.4284

RT3

11.8825

56.6379

RT4

Thermal Capacitance (Joules/°C)

Foot

N/A

Junction to

CT1

Ambient

6.7430 m

32.7582 m

109.4727 m

1.1804

Case

1.9260 m

787.5516 u

18.2079 m

9.3126 m

CT2

CT3

CT4

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73834

Revision 03-Mar-06

www.vishay.com

12 3

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