5秒后页面跳转
SI7401DN-T1-E3 PDF预览

SI7401DN-T1-E3

更新时间: 2024-11-02 15:51:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 76K
描述
Transistor

SI7401DN-T1-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.8
配置:Single最大漏极电流 (Abs) (ID):7.3 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.8 W子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

SI7401DN-T1-E3 数据手册

 浏览型号SI7401DN-T1-E3的Datasheet PDF文件第2页浏览型号SI7401DN-T1-E3的Datasheet PDF文件第3页浏览型号SI7401DN-T1-E3的Datasheet PDF文件第4页浏览型号SI7401DN-T1-E3的Datasheet PDF文件第5页 
Si7401DN  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFETS: 1.8-V Rated  
VDS (V)  
rDS(on) (Ω)  
ID (A)  
– 11  
New PowerPAK® Package  
– Low Thermal Resistance, RthJC  
– Low 1.07-mm Profile  
Pb-free  
Available  
0.021 at VGS = – 4.5 V  
0.028 at VGS = – 2.5 V  
0.034 at VGS = – 1.8 V  
RoHS*  
– 9.8  
– 8.9  
–20  
COMPLIANT  
APPLICATIONS  
Load/Power Switching In Cell Phones and Pagers  
PA Switch for Cellular Devices  
Battery Operated Systems  
PowerPAK 1212-8  
S
S
3.30 mm  
3.30 mm  
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
D
P-Channel MOSFET  
Bottom View  
Ordering Information: Si7401DN-T1  
Si7401DN-T1–E3 (Lead (Pb)–free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
– 20  
8
V
VGS  
TA = 25 °C  
– 11  
– 7.3  
– 5.2  
Continuous Drain Current (TJ = 150 °C)a  
ID  
TA = 85 °C  
– 8.2  
A
IDM  
IS  
– 30  
Pulsed Drain Current  
Continuous Source Current (Diode Conduction)a  
– 3.2  
3.8  
– 1.3  
1.5  
T
A = 25 °C  
A = 85 °C  
Maximum Power Dissipationa  
PD  
W
T
2.0  
0.8  
Operating Junction and Storage Temperature Range  
Soldering Recommendationsb,c  
TJ, Tstg  
– 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
26  
Maximum  
Unit  
t 10 sec  
33  
81  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
65  
°C/W  
Maximum Junction-to-Case  
RthJC  
1.9  
2.4  
Notes  
a. Surface Mounted on 1" x 1" FR4 Board.  
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is  
not required to ensure adequate bottom side solder interconnection.  
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 71423  
S-51210–Rev. B, 27-Jun-05  
www.vishay.com  
1

与SI7401DN-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI7402DN VISHAY

获取价格

N-Channel 12-V (D-S) MOSFET
SI7402DN-T1 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI7403BDN VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI7403DN VISHAY

获取价格

P-Channel 20-V (D-S) MOSFET
SI7404DN VISHAY

获取价格

N-Channel 30-V (D-S) Fast Switching MOSFET
SI7404DN-E3 VISHAY

获取价格

TRANSISTOR 8.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, 1212-8, POWERPAK-8, FET G
SI7404DN-T1 VISHAY

获取价格

N-Channel 30 V (D-S) Fast Switching MOSFET
SI7404DN-T1-E3 VISHAY

获取价格

N-Channel 30 V (D-S) Fast Switching MOSFET
SI7404DN-T1-GE3 VISHAY

获取价格

Trans MOSFET N-CH 30V 8.5A 8-Pin PowerPAK 1212 T/R
SI7405BDN VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET