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SI7392ADP-T1-GE3 PDF预览

SI7392ADP-T1-GE3

更新时间: 2024-11-02 21:06:19
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
7页 102K
描述
TRANSISTOR 17.5 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power

SI7392ADP-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-XDSO-C5针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):30 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):17.5 A
最大漏源导通电阻:0.0075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-XDSO-C5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):50 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI7392ADP-T1-GE3 数据手册

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Si7392ADP  
Vishay Siliconix  
N-Channel Reduced Q , Fast Switching MOSFET  
g
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
VDS (V)  
RDS(on) ()  
ID (A)  
30  
Qg (Typ.)  
0.0075 at VGS = 10 V  
0.0115 at VGS = 4.5 V  
PowerPAK SO-8  
Extremely Low Qgd for Low Switching Losses  
30  
12  
TrenchFET® Power MOSFET  
30  
New Low Thermal ResistancePowerPAK®  
Package with Low 1.07 mm Profile  
100 % Rg Tested  
Complaint to RoHS Directive 2002/95/EC  
S
6.15 mm  
5.15 mm  
D
1
S
2
APPLICATIONS  
S
3
G
High-Side DC/DC Conversion  
- Notebook  
4
D
8
- Server  
D
G
7
D
6
D
5
Bottom View  
S
Ordering Information: Si7392ADP-T1-E3 (Lead (Pb)-free)  
Si7392ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
VDS  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TC = 25 °C  
30  
T
C = 70 °C  
A = 25 °C  
30  
Continuous Drain Current (TJ = 150 °C)a  
ID  
17.5b, c  
14.0b, c  
50  
T
A
TA = 70 °C  
IDM  
IS  
Pulsed Drain Current  
T
C = 25 °C  
A = 25 °C  
30  
4.5b, c  
25  
Continuous Source-Drain Diode Current  
T
A
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single Pulse Avalanche Energy  
30  
mJ  
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
27.5  
17.5  
5b, c  
3.2b, c  
T
T
Maximum Power Dissipationa  
PD  
W
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
RthJC  
Typical  
20  
Maximum  
Unit  
t 10 s  
Steady State  
25  
°C/W  
3.5  
4.5  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/ppg?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
Document Number: 73461  
S11-0212-Rev. E, 14-Feb-11  
www.vishay.com  
1

SI7392ADP-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI7388DP-T1-GE3 VISHAY

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N-CH REDUCED QG, FAST SWITCHING MOSFET - Tape and Reel
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