Datasheet > SI7390DP-T1

SI7390DP-T1

更新时间： 2024-11-01 21:53:31

品牌	Logo	应用领域
威世 - VISHAY		开关
页数	文件大小	规格书
5页	185K
描述
N-Channel 30-V (D-S) Fast Switching WFET

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技术参数
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SI7390DP-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.31
配置：	Single	最大漏极电流 (Abs) (ID)：	9 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e0
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	5 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

SI7390DP-T1 数据手册

Si7390DP

Vishay Siliconix

New Product

N-Channel 30-V (D-S) Fast Switching WFET

FEATURES

PRODUCT SUMMARY

•

Extremely Low Qgd WFET Technology

V_DS(V)

r_DS(on)(Ω)

I_D(A)

for Low Switching Losses

Available

0.0095 @ V_GS= 10 V

0.0135 @ V_GS= 4.5 V

•

TrenchFET^®Power MOSFET

New Low Thermal Resistance PowerPAK^®

Package with Low 1.07-mm Profile

100 % R_gTested

RoHS*

COMPLIANT

•

APPLICATIONS

•

High-Side DC/DC Conversion

PowerPAK SO-8

- Notebook

- Server

- Workstation

6.15 mm

5.15 mm

•

Point-of-Load Conversion

Bottom View

N-Channel MOSFET

Ordering Information: Si7390DP-T1

Si7390DP-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25°C

T_A= 70°C

Continuous Drain Current (T_J= 150°C)^a

I_D

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

I_DM

I_S

4.1

1.5

1.8

1.1

T_A= 25°C

Maximum Power Dissipation^a

P_D

_A= 70°C

3.2

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^b,c

T_J, T_stg

–55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

Steady State

Maximum Junction-to-Ambient (MOSFET)^a

Maximum Junction-to-Case (Drain)

°C/W

R_thJC

2.1

3.2

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is

not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72214

S-51773-Rev. C, 31-Oct-05

www.vishay.com

12 3 4 5

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与SI7390DP-T1相关器件

型号	品牌	获取价格	描述	数据表
SI7390DP-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) Fast Switching WFET
SI7390DP-T1-GE3	VISHAY	获取价格	N-CH 30-V (D-S), FAST SWITCHING MOSFET - Tape and Reel
SI7392ADP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI7392ADP-T1-GE3	VISHAY	获取价格	TRANSISTOR 17.5 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPA
SI7392DP	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI7392DP-T1	VISHAY	获取价格	N-Channel Reduced Qg, Fast Switching WFET
SI7392DP-T1-E3	VISHAY	获取价格	TRANSISTOR 9 A, 30 V, 0.00975 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, POWERPAK,
SI7392DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 9 A, 30 V, 0.00975 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COM
SI7401DN	VISHAY	获取价格	P-Channel 20-V (D-S) MOSFET
SI7401DN	ADI	获取价格	Thermoelectric Cooler Controller

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