Datasheet > SI3552DV_09

SI3552DV_09

更新时间： 2024-11-21 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	203K
描述
N- and P-Channel 30-V (D-S) MOSFET

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SI3552DV_09 数据手册

Si3552DV

Vishay Siliconix

N- and P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

2.5

Definition

0.105 at V_GS= 10 V

0.175 at V_GS= 4.5 V

0.200 at V_GS= - 10 V

0.360 at V_GS= - 4.5 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

N-Channel

P-Channel

2.0

- 1.8

- 1.2

Compliant to RoHS Directive 2002/95/EC

- 30

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3552DV-T1-E3 (Lead (Pb)-free)

Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

- 30

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

2.5

2.0

- 1.8

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

- 1.2

I_DM

I_S

Pulsed Drain Current

- 7

Continuous Source Current (Diode Conduction)^{a, b}

T_A= 25 °C

T_A= 70 °C

1.05

- 1.05

1.15

0.73

Maximum Power Dissipation^{a, b}

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

110

150

Maximum Junction-to-Ambient^a

R_thJA

Steady State

130

°C/W

R_thJL

Maximum Junction-to-Lead

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 5 s.

Document Number: 70971

S09-2110-Rev. C, 12-Oct-09

www.vishay.com

12 3 4 5 6 7...12

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