Datasheet > SI3590DV_08

SI3590DV_08

更新时间： 2024-09-27 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	123K
描述
N- and P-Channel 30-V (D-S) MOSFET

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SI3590DV_08 数据手册

Si3590DV

Vishay Siliconix

New Product

N- and P-Channel 30-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

I_D(A)

Pb-free

•

Ultra Low r_DS(on)N- and P-Channel

for High Efficiency

0.077 at V_GS= 4.5 V

0.120 at V_GS= 2.5 V

0.170 at V_GS= - 4.5 V

0.300 at V_GS= - 2.5 V

Available

N-Channel

P-Channel

RoHS*

•

Optimized for High-Side/Low-Side

Minimized Conduction Losses

COMPLIANT

- 2

- 30

- 1.2

APPLICATIONS

•

Portable Devices Including PDAs, Cellular

Phones and Pagers

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3590DV-T1

Si3590DV-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

10 sec Steady State

Parameter

Symbol

Unit

10 sec

Steady State

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

- 30

T_A= 25 °C

T_A= 70 °C

2.5

2.0

- 2

- 1.7

- 1.3

Continuous Drain Current (T_J= 150 °C)^a

I_D

2.3

- 1.6

I_DM

I_S

Pulsed Drain Current

- 8

Continuous Source Current (Diode Conduction)^a

1.05

1.15

0.70

0.75

0.83

0.53

- 1.05

1.15

- 0.75

0.83

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

0.70

0.53

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Typ

Parameter

Symbol

Unit

Typ

Max

110

150

Max

110

150

t ≤ 10 sec

130

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

R_thJF

Steady State

130

°C/W

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72032

S-60422-Rev. B, 20-Mar-06

www.vishay.com

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