是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.89 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2.5 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 0.83 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3590DV-T1-E3 | VISHAY |
获取价格 |
N- and P-Channel 30-V (D-S) MOSFET | |
SI3590DV-T1-GE3 | VISHAY |
获取价格 |
N- and P-Channel 30-V (D-S) MOSFET | |
SI-38 | ETC |
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Dual independent 1080p playback | |
SI3801DV | VISHAY |
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Power Field-Effect Transistor, 2.3A I(D), 0.22ohm, 2-Element, P-Channel, Silicon, Metal-ox | |
SI3805DV | VISHAY |
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P-Channel 20-V (D-S) MOSFET with Schottky Diode | |
SI3805DV-T1-E3 | VISHAY |
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P-Channel 20-V (D-S) MOSFET with Schottky Diode | |
SI3805DV-T1-GE3 | VISHAY |
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P-CH TSOP-6 20V 108MOHM @ 4.5V W/ 0.5A SCHOTTKY DIODE - Tape and Reel | |
SI3812DV | VISHAY |
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N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV_08 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode | |
SI3812DV-T1 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET With Schottky Diode |