Datasheet > SI3586DV_09

SI3586DV_09

更新时间： 2024-11-21 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	211K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI3586DV_09 数据手册

Si3586DV

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.4

Definition

TrenchFET^®Power MOSFET

Fast Switching In Small Footprint

Very Low R_DS(on)for Increased Efficiency

Compliant to RoHS Directive 2002/95/EC

0.060 at V_GS= 4.5 V

0.070 at V_GS= 2.5 V

0.100 at V_GS= 1.8 V

0.110 at V_GS= - 4.5 V

0.145 at V_GS= - 2.5 V

0.220 at V_GS= - 1.8V

•

N-Channel

P-Channel

3.2

2.5

- 2.5

- 2.0

- 1.0

- 20

APPLICATIONS

•

Load Switch for Portable Devices

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free)

Si3586DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

Steady State

- 20

Parameter

Symbol

V_DS

Unit

5 s

Steady State

5 s

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

3.4

2.7

2.9

2.3

- 2.5

- 2.0

- 2.1

- 1.7

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

1.05

1.15

0.73

0.75

0.83

0.53

- 1.05

1.15

- 0.75

0.83

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

0.73

0.53

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

110

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

130

150

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Note:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72310

S09-2110-Rev. D, 12-Oct-09

www.vishay.com

12 3 4 5 6 7...13

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