Datasheet > SI3588DV_09

SI3588DV_09

更新时间： 2024-09-27 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
12页	221K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI3588DV_09 数据手册

Si3588DV

Vishay Siliconix

N- and P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

3.0

Definition

0.080 at V_GS= 4.5 V

0.100 at V_GS= 2.5 V

0.128 at V_GS= 1.8 V

0.145 at V_GS= - 4.5 V

0.200 at V_GS= - 2.5 V

0.300 at V_GS= - 1.8 V

•

TrenchFET^®Power MOSFETs: 1.8 V Rated

Compliant to RoHS Directive 2002/95/EC

N-Channel

P-Channel

2.6

2.3

- 2.2

- 1.8

- 1.5

- 20

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free)

Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

N-Channel

P-Channel

Parameter

Symbol

V_DS

Unit

5 s

Steady State

5 s

Steady State

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 70 °C

3.0

2.3

2.5

2.0

- 2.2

- 0.57

- 1.5

Continuous Drain Current (T_J= 150 °C)^a

I_D

- 1.8

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

T_A= 25 °C

T_A= 70 °C

1.05

1.15

0.73

0.75

0.83

0.53

- 1.05

1.15

- 0.75

0.083

0.53

Maximum Power Dissipation^a

P_D

0.73

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 5 s

110

150

Maximum Junction-to-Ambient^a

Steady State

130

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 71332

S09-2275-Rev. B, 02-Nov-09

www.vishay.com

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