Datasheet > SI3588DV-T1

SI3588DV-T1

更新时间： 2024-09-27 21:21:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	55K
描述
Transistor,

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中文翻译

获取价格

技术参数
数据手册

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SI3588DV-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.91
Base Number Matches：	1

SI3588DV-T1 数据手册

Si3588DV

Vishay Siliconix

New Product

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.080 @ V = 4.5 V

3.0

2.6

N-Channel

P-Channel

0.100 @ V = 2.5 V

0.128 @ V = 1.8 V

2.3

0.145 @ V = –4.5 V

–2.2

–1.8

–1.5

0.200 @ V = –2.5 V

–20

0.300 @ V = –1.8 V

TSOP-6

Top View

3 mm

2.85 mm

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

5 secs Steady State

5 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

–20

= 25_C

= 70_C

3.0

2.3

2.5

2.0

–2.2

–1.8

–0.57

–1.5

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.05

1.15

0.73

0.75

0.83

0.53

–1.05

1.15

0.73

–0.75

0.083

0.53

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71332

S-02383—Rev. A, 23-Oct-00

www.vishay.com

12 3 4 5 6 7

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