SI3590DV

更新时间： 2024-09-26 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
8页	66K
描述
N- and P-Channel 30-V (D-S) MOSFET

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技术参数
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SI3590DV 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.03	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	1.7 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	1.15 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI3590DV 数据手册

Si3590DV

Vishay Siliconix

New Product

N- and P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D Ultra Low r_DS(on)N- and P-Channel for High

Efficiency

0.077 @ V = 4.5 V

D Optimized for High-Side/Low-Side

D Minimized Conduction Losses

APPLICATIONS

N-Channel

P-Channel

0.120 @ V = 2.5 V

0.170 @ V

= -4.5 V

= -2.5 V

-2

-30

0.300 @ V

-1.2

D Portable Devices Including PDAs, Cellular

Phones and Pagers

TSOP-6

Top View

3 mm

2.85 mm

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

10 secs Steady State

10 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"12

= 25_C

= 70_C

2.5

2.0

- 2

-1.7

-1.3

Continuous Drain Current (T = 150_C)

2.3

-1.6

Pulsed Drain Current

-8

Continuous Source Current (Diode Conduction)

1.05

1.15

0.70

0.75

0.83

0.53

-1.05

1.15

0.70

-0.75

0.83

0.53

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

N-Channel

P-Channel

Typ

Max

Typ

Max

Parameter

Symbol

Unit

t v 10 sec

130

110

150

130

110

150

Maximum Junction-to-Ambient

thJA

thJF

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72032

S-21979—Rev. A, 04-Nov-02

www.vishay.com

12 3 4 5 6 7 8

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