Datasheet > SI3586DV

SI3586DV

更新时间： 2024-11-20 21:55:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	89K
描述
N- and P-Channel 20-V (D-S) MOSFET

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SI3586DV 数据手册

Si3586DV

Vishay Siliconix

New Product

N- and P-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D Fast Switching In Small Footprint

0.060 @ V = 4.5 V

3.4

3.2

D Very Low r_DS(on)for Increased Efficiency

APPLICATIONS

N-Channel

P-Channel

0.070 @ V = 2.5 V

0.100 @ V = 1.8 V

2.5

D Load Switch for Portable Devices

0.110 @ V = −4.5 V

−2.5

−2.0

−1.0

0.145 @ V = −2.5 V

−20

0.220 @ V = −1.8 V

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3586DV-T1—E3

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

N-Channel

P-Channel

5 secs Steady State

5 secs

Steady State

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

= 25_C

= 70_C

3.4

2.7

2.9

2.3

−2.5

−2.0

−2.1

−1.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.05

1.15

0.73

0.75

0.83

0.53

−1.05

1.15

−0.75

0.83

= 25_C

= 70_C

Maximum Power Dissipation

0.73

0.53

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72310

S-32412—Rev. B, 24-Nov-03

www.vishay.com

12 3 4 5 6 7 8

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