SI3585CDV

更新时间： 2024-11-21 09:26:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
16页	235K
描述
N- and P-Channel 20 V (D-S) MOSFET

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SI3585CDV 数据手册

Si3585CDV

Vishay Siliconix

N- and P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^aQ_g(Typ.)

Definition

TrenchFET^®Power MOSFETs

100 % R_gTested

Compliant to RoHS Directive 2002/95/EC

0.058 at V_GS= 4.5 V

0.078 at V_GS= 2.5 V

0.195 at V_GS= - 4.5 V

0.316 at V_GS= - 2.5 V

3.9

•

N-Channel

P-Channel

2.9 nC

3.3

- 2.1

- 20

1.6 nC

- 1.7

APPLICATIONS

•

Load Switch for Portable Devices

DC/DC Converters

Drivers: Motor, Solenoid, Relay

TSOP-6

Top View

G₁

S₂

G₂

D₁

S₁

D₂

3 mm

Marking Code

EC XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

N-Channel MOSFET

P-Channel MOSFET

Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

N-Channel

P-Channel

Unit

V_DS

- 20

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.9

3.1

- 2.1

- 1.7

- 1.9^{b, c}

- 1.5^{b, c}

- 5

I_D

Continuous Drain Current (T_J= 150 °C)

3.5^{b, c}

2.8^{b, c}

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

Source Drain Current Diode Current

T_C= 25 °C

1.2

- 1.1

0.9^{b, c}

1.4

- 0.9^{b, c}

1.3

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

0.9

0.8

P_D

Maximum Power Dissipation

1.1^{b, c}

0.7^{b, c}

1.1^{b, c}

0.7^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

- 55 to 150

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

N-Channel

Typ. Max.

P-Channel

Typ. Max.

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Unit

t  5 s

R_thJA

110

115

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 150 °C/W for N-Channel and 155 °C/W for P-Channel.

Document Number: 67470

S11-0613-Rev. A, 04-Apr-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...16

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与SI3585CDV相关器件

型号	品牌	获取价格	描述	数据表
SI3585CDV-T1-GE3	VISHAY	获取价格	N- and P-Channel 20 V (D-S) MOSFET
SI3585DV		获取价格	N- and P-Channel 20-V (D-S) MOSFET
SI3585DV-E3	VISHAY	获取价格	TRANSISTOR 2000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FE
SI3585DV-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, N-Channel and P-Channel, Si
SI3585DV-T1-E3	VISHAY	获取价格	TRANSISTOR 2000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPL
SI3585DV-T1-GE3	VISHAY	获取价格	TRANSISTOR 2000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FR
SI3586DV	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SI3586DV_08	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SI3586DV_09	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET
SI3586DV-T1-E3	VISHAY	获取价格	N- and P-Channel 20-V (D-S) MOSFET

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