SI3552DV-T1

更新时间： 2024-09-27 07:03:51

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
8页	117K
描述
N- and P-Channel 30-V (D-S) MOSFET

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技术参数
数据手册

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SI3552DV-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	2.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	1.15 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

SI3552DV-T1 数据手册

Si3552DV

Vishay Siliconix

N- and P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

D TrenchFETr Power MOSFET

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

0.105 @ V = 10 V

2.5

N-Channel

P-Channel

0.175 @ V = 4.5 V

2.0

0.200 @ V = -10 V

-1.8

-1.2

-30

0.360 @ V = -4.5 V

TSOP-6

Top View

3 mm

2.85 mm

Ordering Information: Si3552DV-T1

N-Channel MOSFET

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

2.5

2.0

-30

"20

-1.8

-1.2

-7

= 25_C

= 70_C

a, b

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

a, b

Continuous Source Current (Diode Conduction)

1.05

-1.05

= 25_C

= 70_C

1.15

0.73

a, b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

thJL

_C/W

Maximum Junction-to-Lead

Notes

a. Surface Mounted on FR4 Board.

b. t v 5 sec

Document Number: 70971

S-31725—Rev. B, 18-Aug-03

www.vishay.com

12 3 4 5 6 7 8

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