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SI3445DV-T1-E3 PDF预览

SI3445DV-T1-E3

更新时间: 2024-11-06 12:48:59
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
9页 187K
描述
P-Channel 1.8-V (G-S) MOSFET

SI3445DV-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.66Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:8 V
最大漏极电流 (Abs) (ID):5.6 A最大漏极电流 (ID):5.6 A
最大漏源导通电阻:0.042 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

SI3445DV-T1-E3 数据手册

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Si3445DV  
Vishay Siliconix  
P-Channel 1.8-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
5.6  
Definition  
0.042 at VGS = - 4.5 V  
0.060 at VGS = - 2.5 V  
0.080 at VGS = - 1.8 V  
TrenchFET® Power MOSFETs  
1.8 V Rated  
Compliant to RoHS Directive 2002/95/EC  
- 8  
4.7  
2.9  
TSOP-6  
Top View  
(4) S  
1
2
3
6
5
3 mm  
(3) G  
4
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3445DV-T1-E3 (Lead (Pb)-free)  
Si3445DV-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 8  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
5.6  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
4.5  
A
IDM  
IS  
Pulsed Drain Current  
20  
Continuous Source Current (Diode Conduction)a, b  
- 1.7  
2.0  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa, b  
PD  
W
1.3  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
62.5  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
RthJA  
°C/W  
Steady State  
106  
Notes:  
a. Surface Mounted on FR4 board.  
b. t 5 s.  
Document Number: 70820  
S09-0766-Rev. C, 04-May-09  
www.vishay.com  
1

SI3445DV-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI3445DV-T1-GE3 VISHAY

类似代替

TRANSISTOR 5.6 A, 8 V, 0.042 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMP
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P-Channel 20-V (D-S) MOSFET
SI3445DV FAIRCHILD

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