SI3446DV

更新时间： 2024-09-16 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	92K
描述
N-Channel 2.5-V (G-S) MOSFET

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SI3446DV 数据手册

Si3446DV

Vishay Siliconix

N-Channel 2.5-V (G-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)( )

I_D(A)

D 100% R_gTested

0.045 @ V = 4.5 V

5.3

4.4

RoHS

COMPLIANT

0.065 @ V = 2.5

(1, 2, 5, 6) D

TSOP-6

Top View

3 mm

(3) G

2.85 mm

(4) S

Ordering Information: Si3446DV-T1

Si3446DV-T1–E3 (Lead (Pb)–free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 70_C

5.3

4.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

1.7

= 25_C

= 70_C

2.0

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

_C/W

62.5

Notes

a. Surface Mounted on FR4 Board, t v 5 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70715

S-51451—Rev. C, 01-Aug-05

www.vishay.com

12 3 4 5

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