是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SUPERSOT-6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 5.5 A | 最大漏极电流 (ID): | 5.5 A |
最大漏源导通电阻: | 0.033 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SI3447DV-T1-E3 | VISHAY |
功能相似 |
Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3447DV_NL | FAIRCHILD |
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暂无描述 | |
SI3447DVD87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DV-E3 | VISHAY |
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Transistor | |
SI3447DVL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DVS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DV-T1 | VISHAY |
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Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met | |
SI3447DV-T1-E3 | VISHAY |
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Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met | |
SI3451DV | VISHAY |
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P-Channel 20-V (D-S) MOSFET | |
SI3451DV-T1-E3 | VISHAY |
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P-Channel 20-V (D-S) MOSFET | |
SI3452 | SILICON |
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QUAD HIGH-VOLTAGE PORT CONTROLLER FOR POE AND POE PSES |