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SI3447DV PDF预览

SI3447DV

更新时间: 2024-11-08 22:33:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 91K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

SI3447DV 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SUPERSOT-6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.32
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):5.5 A最大漏极电流 (ID):5.5 A
最大漏源导通电阻:0.033 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI3447DV 数据手册

 浏览型号SI3447DV的Datasheet PDF文件第2页浏览型号SI3447DV的Datasheet PDF文件第3页浏览型号SI3447DV的Datasheet PDF文件第4页浏览型号SI3447DV的Datasheet PDF文件第5页 
April 2001  
Si3447DV  
P-Channel 1.8V Specified PowerTrench MOSFET  
General Description  
Features  
This P-Channel 1.8V specified MOSFET uses  
Fairchild’s low voltage PowerTrench process. It has  
been optimized for battery power management  
applications.  
–5.5 A, –20 V. RDS(ON) = 33 m@ VGS = –4.5 V  
RDS(ON) = 43 m@ VGS = –2.5 V  
DS(ON) = 60 m@ VGS = –1.8 V  
R
Fast switching speed.  
Applications  
High performance trench technology for extremely  
Battery management  
Load switch  
low RDS(ON)  
Battery protection  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–20  
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
±8  
–5.5  
(Note 1a)  
–20  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
W
0.8  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.447  
Si3447DV  
7’’  
8mm  
3000 units  
Si3447DV Rev A (W)  
2001 Fairchild Semiconductor Corporation  

SI3447DV 替代型号

型号 品牌 替代类型 描述 数据表
SI3447DV-T1-E3 VISHAY

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