是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.3 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 5.3 A |
最大漏极电流 (ID): | 5.3 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3446DVL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SI3446DVS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
SI3446DV-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3446DV-T1 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3446DV-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI3446DV-T2 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3446DV-T2-E3 | TEMIC |
获取价格 |
TRANSISTOR 5.3 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
SI3446DV-T3 | TEMIC |
获取价格 |
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
SI3446DV-T3-E3 | TEMIC |
获取价格 |
TRANSISTOR 5.3 A, 20 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
SI3447 | FAIRCHILD |
获取价格 |
P-Channel 1.8V Specified PowerTrench MOSFET |