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SI3447BDV PDF预览

SI3447BDV

更新时间: 2024-09-15 22:33:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
5页 66K
描述
P-Channel 12-V (D-S) MOSFET

SI3447BDV 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.8
配置:Single最大漏极电流 (Abs) (ID):4.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

SI3447BDV 数据手册

 浏览型号SI3447BDV的Datasheet PDF文件第2页浏览型号SI3447BDV的Datasheet PDF文件第3页浏览型号SI3447BDV的Datasheet PDF文件第4页浏览型号SI3447BDV的Datasheet PDF文件第5页 
Si3447BDV  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET: 1.8-V Rated  
D Ultra Low On-Resistance  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.040 @ V = 4.5 V  
6.0  
5.2  
4.5  
GS  
D Load Switch  
D PA Switch  
12  
0.053 @ V = 2.5  
V
V
GS  
0.072 @ V = 1.8  
GS  
(4) S  
TSOP-6  
Top View  
1
2
3
6
5
(3) G  
3 mm  
4
2.85 mm  
(1, 2, 5, 6) D  
Ordering Information: Si3447BDV-T1  
P-Channel MOSFET  
Si3447BDV-T1—E3 (Lead Free)  
Marking Code:  
B7xxx  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
12  
DS  
V
V
GS  
"8  
T
= 25_C  
= 85_C  
4.5  
3.3  
6.0  
4.3  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
20  
a
Continuous Diode Current (Diode Conduction)  
I
1.7  
2.0  
0.9  
1.1  
S
T
= 25_C  
= 85_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.0  
0.6  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
50  
90  
30  
62.5  
110  
36  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72020  
S-40424—Rev. B, 15-Mar-04  
www.vishay.com  
1

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