生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 4.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3447BDV-E3 | VISHAY |
获取价格 |
TRANSISTOR 4500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6, FET General Purpose | |
SI3447BDV-T1 | VISHAY |
获取价格 |
P-Channel 12-V (D-S) MOSFET | |
SI3447BDV-T1-E3 | VISHAY |
获取价格 |
P-Channel 12-V (D-S) MOSFET | |
SI3447BDV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 4500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI3447CDV | VISHAY |
获取价格 |
P-Channel 12-V (D-S) MOSFET | |
SI3447CDV-T1-E3 | VISHAY |
获取价格 |
P-Channel 12-V (D-S) MOSFET | |
SI3447CDV-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL | |
SI3447DV | VISHAY |
获取价格 |
P-Channel 1.8V (G-S) MOSFET | |
SI3447DV | FAIRCHILD |
获取价格 |
P-Channel 1.8V Specified PowerTrench MOSFET | |
SI3447DV_NL | FAIRCHILD |
获取价格 |
暂无描述 |