是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | compliant | 风险等级: | 5.89 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 5.2 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI3447DV_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
SI3447DVD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DV-E3 | VISHAY |
获取价格 |
Transistor | |
SI3447DVL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DVS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
SI3447DV-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met | |
SI3447DV-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met | |
SI3451DV | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET | |
SI3451DV-T1-E3 | VISHAY |
获取价格 |
P-Channel 20-V (D-S) MOSFET | |
SI3452 | SILICON |
获取价格 |
QUAD HIGH-VOLTAGE PORT CONTROLLER FOR POE AND POE PSES |