SI3447CDV

更新时间： 2024-09-16 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	139K
描述
P-Channel 12-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI3447CDV 数据手册

New Product

Si3447CDV

Vishay Siliconix

P-Channel 12-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

_D(A)^a

- 7.8

- 6.6

- 5.6

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

•

PWM Optimized

0.036 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

0.068 at V_GS= - 1.8 V

RoHS

COMPLIANT

APPLICATIONS

- 12

12 nC

•

Load Switch

•

PA Switch

TSOP-6

Top View

(4) S

3 mm

(3) G

Marking Code

AO XXX

Lot Traceability

and Date Code

Part # Code

2.85 mm

(1, 2, 5, 6) D

Ordering Information: Si3447CDV-T1-E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

- 12

Unit

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 7.8

- 6.2

Continuous Drain Current (T_J= 150 °C)

I_D

- 6.3^{b, c}

- 5.0^{b, c}

- 20

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

- 2.5

- 1.67^{b, c}

Continuous Source-Drain Diode Current

_C= 25 °C

3.0

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

2.0

P_D

Maximum Power Dissipation

2.0^{b, c}

1.3^{b, c}

T_J, T_stg

- 55 to 150

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

R_thJF

Typical

Maximum

62.5

Unit

t ≤ 5 s

Steady State

°C/W

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 69784

S-80189-Rev. A, 04-Feb-08

www.vishay.com

12 3 4 5 6 7

中文翻译

下载PDF

与SI3447CDV相关器件

型号	品牌	获取价格	描述	数据表
SI3447CDV-T1-E3	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET
SI3447CDV-T1-GE3	VISHAY	获取价格	TRANSISTOR 7800 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPL
SI3447DV	VISHAY	获取价格	P-Channel 1.8V (G-S) MOSFET
SI3447DV	FAIRCHILD	获取价格	P-Channel 1.8V Specified PowerTrench MOSFET
SI3447DV_NL	FAIRCHILD	获取价格	暂无描述
SI3447DVD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI3447DV-E3	VISHAY	获取价格	Transistor
SI3447DVL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI3447DVS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
SI3447DV-T1	VISHAY	获取价格	Power Field-Effect Transistor, 5.2A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Met