SI3446ADV

更新时间： 2024-11-09 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	115K
描述
N-Channel 20-V (D-S) MOSFET

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中文翻译

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SI3446ADV 数据手册

Si3446ADV

Vishay Siliconix

New Product

N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

I_D(A)^a

•

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

New Thermally Enhanced PowerPAK^®

0.037 at V_GS= 4.5 V

0.065 at V_GS= 2.5V

ChipFET^®Package

5.6 nC

RoHS

- Small Footprint Area

COMPLIANT

- Low On-Resistance

- Thin 0.8-mm Profile

APPLICATIONS

•

Load Switch for Portable Applications

Small High Frequency DC-DC converter

TSOP-6

Top View

(1, 2, 5, 6)

3 mm

Marking Code

XXX

Lot Traceability

and Date Code

(3)

Part # Code

2.85 mm

Ordering Information: Si3446ADV–T1–E3 (Lead (Pb)–free)

(4)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

_C= 70 °C

_A= 25 °C

6^a

5.9

Continuous Drain Current (T_J= 150 °C)

I_D

5.8^b,c

4.7^b,c

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

2.7

1.7^b,c

3.2

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

2.1

2^b,c

P_D

Maximum Power Dissipation

1.25^b,c

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

t ≤ 5 sec

Steady State

62.5

°C/W

Notes:

a. Package Limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 sec.

d. Maximum under steady state conditions is 110 °C/W.

Document Number: 73772

S-60469–Rev. A, 27-Mar-06

www.vishay.com

12 3 4 5 6 7

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