Datasheet > SEMIX303GB12E4P

SEMIX303GB12E4P

更新时间： 2024-01-04 03:13:57

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		栅
页数	文件大小	规格书
3页	190K
描述
Insulated Gate Bipolar Transistor

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技术参数
数据手册

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SEMIX303GB12E4P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.62
Base Number Matches：	1

SEMIX303GB12E4P 数据手册

SEMiX303GB12E4p

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

466

359

300

900

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

I_CRM= 3xI_Cnom

V_CC= 800 V

-20 ... 20

SEMiX^®3p

_GE≤ 20 V

_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Trench IGBT Modules

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

378

284

T_j= 175 °C

SEMiX303GB12E4p

I_Fnom

I_FRM

I_FSM

T_j

300

900

1485

-40 ... 175

°C

Target Data

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

Features

• Homogeneous Si

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• Press-fit pins as auxiliary contacts

• UL recognized, file no. E63532

Module

I_t(RMS)

T_stg

T_terminal= 80 °C

600

-40 ... 125

4000

°C

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

Characteristics

Symbol Conditions

IGBT

• AC inverter drives

• UPS

min.

typ.

max.

Unit

• Renewable energy systems

I_C= 300 A

T_j= 25 °C

V_CE(sat)

1.8

2.2

2.05

2.4

Remarks

• Product reliability results are valid for

T_j=150°C

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

3.3

5.0

5.8

0.9

0.8

3.8

5.3

6.5

4.0

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE=V_CE, I_C= 11.4 mA

T_j= 25 °C

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

R_Gint

t_d(on)

t_r

E_on

t_d(off)

t_f

18.5

1.22

1.04

1695

2.50

190

600

120

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

T_j= 150 °C

_C= 300 A

_GE= ±15 V

_{G on}= 1.3 Ω

_{G off}= 1.3 Ω

di/dt_on= 6000 A/µs

di/dt_off= 6000 A/µs

du/dt_off= 3100 V/

µs

T_j= 150 °C

E_off

R_th(j-c)

per IGBT

0.095

K/W

Rev. 1 – 21.11.2013

12 3

中文翻译

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