SEMiX305TMLI17E4C
Absolute Maximum Ratings
Symbol Conditions
IGBT1
Values
Unit
Tj = 25 °C
VCES
IC
1700
486
376
300
900
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
-20 ... 20
SEMiX® 5
VCC = 1000 V, VGE ≤ 15 V, Tj = 150 °C,
CES ≤1700 V
tpsc
10
µs
°C
V
Tj
-40 ... 175
3-Level TNPC IGBT-Module
IGBT2
VCES
IC
Tj = 25 °C
1200
407
312
300
900
V
A
A
A
A
V
Engineering Sample
SEMiX305TMLI17E4C
Target Data
Tc = 25 °C
Tc = 80 °C
Tj = 175 °C
ICnom
ICRM
VGES
ICRM = 3 x ICnom
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
-20 ... 20
VCC = 800 V, VGE ≤ 15 V, Tj = 150 °C,
CES ≤ 1200 V
tpsc
Tj
10
µs
°C
V
-40 ... 175
• IGBT 4 Trench Gate Technology
• VCE(sat) with positive temperature
coefficient
Diode1
VRRM
IF
Tj = 25 °C
1700
338
250
300
600
V
A
A
A
A
• Low inductance case
Tc = 25 °C
Tc = 80 °C
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Tj = 175 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
1836
-40 ... 175
A
°C
Remarks*
• Case temperature limited to TC=125°C
max.
Diode2
VRRM
IF
Tj = 25 °C
1200
312
232
300
600
V
A
A
A
A
• Product reliability results are valid for
Tc = 25 °C
Tc = 80 °C
T
jop=150°C
Tj = 175 °C
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Dynamic data are estimated
• For storage and case temperature with
TIM see document “ TP (HALA P8)
SEMiX5p “
IFnom
IFRM
IFSM
Tj
IFRM = 2 x IFnom
10 ms, sin 180°, Tj = 25 °C
1620
-40 ... 175
A
°C
Module
It(RMS)
Tstg
400
-40 ... 125
4000
A
°C
V
module without TIM
AC sinus 50Hz, t = 1 min
Visol
TMLI
© by SEMIKRON
Rev. 0.6 – 26.01.2018
1