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SEMIX303GB12E4S_11 PDF预览

SEMIX303GB12E4S_11

更新时间: 2024-02-20 07:27:14
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赛米控丹佛斯 - SEMIKRON 双极性晶体管
页数 文件大小 规格书
5页 601K
描述
Trench IGBT Modules

SEMIX303GB12E4S_11 数据手册

 浏览型号SEMIX303GB12E4S_11的Datasheet PDF文件第2页浏览型号SEMIX303GB12E4S_11的Datasheet PDF文件第3页浏览型号SEMIX303GB12E4S_11的Datasheet PDF文件第4页浏览型号SEMIX303GB12E4S_11的Datasheet PDF文件第5页 
SEMiX303GB12E4s  
Absolute Maximum Ratings  
Symbol Conditions  
Values  
Unit  
IGBT  
VCES  
IC  
1200  
466  
359  
300  
900  
V
A
A
A
A
V
Tc = 25 °C  
Tc = 80 °C  
Tj = 175 °C  
ICnom  
ICRM  
VGES  
ICRM = 3xICnom  
VCC = 800 V  
-20 ... 20  
SEMiX® 3s  
Trench IGBT Modules  
SEMiX303GB12E4s  
Features  
V
V
GE 20 V  
CES 1200 V  
Tj = 150 °C  
tpsc  
10  
µs  
°C  
Tj  
-40 ... 175  
Inverse diode  
Tc = 25 °C  
Tc = 80 °C  
IF  
338  
252  
300  
A
A
A
A
A
Tj = 175 °C  
IFnom  
IFRM  
IFSM  
Tj  
IFRM = 3xIFnom  
tp = 10 ms, sin 180°, Tj = 25 °C  
900  
1485  
-40 ... 175  
• Homogeneous Si  
°C  
• Trench = Trenchgate technology  
• VCE(sat) with positive temperature  
coefficient  
• High short circuit capability  
• UL recognized, file no. E63532  
Module  
It(RMS)  
Tstg  
Tterminal = 80 °C  
600  
-40 ... 125  
4000  
A
°C  
V
Visol  
AC sinus 50Hz, t = 1 min  
Typical Applications*  
• AC inverter drives  
• UPS  
Characteristics  
Symbol Conditions  
IGBT  
min.  
typ.  
max.  
Unit  
• Electronic Welding  
Remarks  
IC = 300 A  
Tj = 25 °C  
VCE(sat)  
1.8  
2.2  
2.05  
2.4  
V
V
• Case temperature limited to TC=125°C  
max.  
V
GE = 15 V  
Tj = 150 °C  
chiplevel  
• Product reliability results are valid for  
Tj=150°C  
Tj = 25 °C  
Tj = 150 °C  
Tj = 25 °C  
Tj = 150 °C  
VCE0  
rCE  
0.8  
0.7  
3.3  
5.0  
5.8  
0.1  
0.9  
0.8  
3.8  
5.3  
6.5  
0.3  
V
V
m  
m  
V
mA  
mA  
nF  
nF  
nF  
nC  
• Dynamic values apply to the  
following combination of resistors:  
VGE = 15 V  
R
R
R
R
Gon,main = 1,0   
Goff,main = 1,0   
G,X = 2,0   
VGE(th)  
ICES  
VGE=VCE, IC = 11.4 mA  
Tj = 25 °C  
V
5
VGE = 0 V  
CE = 1200 V  
E,X = 0,5   
Tj = 150 °C  
f = 1 MHz  
f = 1 MHz  
f = 1 MHz  
Cies  
Coes  
Cres  
QG  
RGint  
td(on)  
tr  
Eon  
td(off)  
tf  
18.5  
1.22  
1.03  
1695  
2.50  
255  
57  
30  
565  
98  
VCE = 25 V  
GE = 0 V  
V
VGE = - 8 V...+ 15 V  
Tj = 25 °C  
VCC = 600 V  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
Tj = 150 °C  
ns  
I
C = 300 A  
ns  
mJ  
ns  
V
GE = ±15 V  
R
R
G on = 1.8   
G off = 1.8   
di/dton = 5250 A/µs  
di/dtoff = 2825 A/µs  
ns  
Tj = 150 °C  
Eoff  
41.2  
mJ  
Rth(j-c)  
per IGBT  
0.095  
K/W  
GB  
© by SEMIKRON  
Rev. 1 – 05.01.2011  
1

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