Datasheet > SEMIX303GD12E4C_10

SEMIX303GD12E4C_10

更新时间： 2024-02-05 02:07:43

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	313K
描述
Trench IGBT Modules

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数据手册

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SEMIX303GD12E4C_10 数据手册

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SEMiX303GD12E4c

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

466

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

359

I_Cnom

300

I_CRM

I_CRM= 3xI_Cnom

900

V_GES

-20 ... 20

SEMiX^®33c

Trench IGBT Modules

SEMiX303GD12E4c

Features

V_CC= 800 V

V_GE≤ 20 V

V_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

338

252

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

300

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

900

1485

• Homogeneous Si

-40 ... 175

°C

• Trench = Trenchgate technology

• V_CE(sat)with positive temperature

coefficient

• High short circuit capability

• UL recognized, file no. E63532

Module

I_t(RMS)

T_stg

600

-40 ... 125

4000

°C

V_isol

AC sinus 50Hz, t = 1 min

Typical Applications*

• AC inverter drives

• UPS

• Electronic Welding

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Remarks

• Case temperature limited to T_C=125°C

max.

I_C= 300 A

V_CE(sat)

T_j= 25 °C

1.8

2.2

2.05

2.4

_GE= 15 V

T_j= 150 °C

chiplevel

• Product reliability results are valid for

T_j=150°C

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

3.3

5.0

5.8

0.1

0.9

0.8

3.8

5.3

6.5

0.3

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 11.4 mA

T_j= 25 °C

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

18.5

1.22

1.03

1695

2.50

213

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

V_CC= 600 V

I_C= 300 A

R_Gint

t_d(on)

t_r

T_j= 150 °C

E_on

t_d(off)

t_f

29.4

535

113

R_{G on}= 1.8 Ω

_{G off}= 1.8 Ω

di/dt_on= 4840 A/µs

di/dt_off= 2980 A/µs

T_j= 150 °C

E_off

41.8

R_th(j-c)

per IGBT

0.095

K/W

Rev. 0 – 05.05.2010

12 3 4 5

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