SEMiX353GB126HDs
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
IC
1200
364
256
225
450
V
A
A
A
A
V
Tc = 25 °C
Tc = 80 °C
Tj = 150 °C
ICnom
ICRM
VGES
ICRM = 2xICnom
VCC = 600 V
-20 ... 20
SEMiX® 3s
Trench IGBT Modules
SEMiX353GB126HDs
Features
V
V
GE ≤ 20 V
CES ≤ 1200 V
Tj = 125 °C
tpsc
10
µs
°C
Tj
-40 ... 150
Inverse diode
Tc = 25 °C
Tc = 80 °C
IF
329
228
225
A
A
A
A
A
Tj = 150 °C
IFnom
IFRM
IFSM
Tj
IFRM = 2xIFnom
tp = 10 ms, sin 180°, Tj = 25 °C
450
1700
-40 ... 150
• Homogeneous Si
°C
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Module
It(RMS)
Tstg
Tterminal = 80 °C
600
-40 ... 125
4000
A
°C
V
Visol
AC sinus 50Hz, t = 1 min
Typical Applications*
• AC inverter drives
• UPS
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Unit
• Electronic Welding
Remarks
IC = 225 A
Tj = 25 °C
VCE(sat)
1.7
2.0
2.1
V
V
• Case temperatur limited to TC=125°C
max.
V
GE = 15 V
Tj = 125 °C
2.45
chiplevel
• Not for new design
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VCE0
rCE
1
1.2
1.1
4.0
6.0
6.5
0.3
V
V
m
m
V
mA
mA
nF
nF
nF
nC
0.9
3.1
4.9
5.8
0.1
VGE = 15 V
VGE(th)
ICES
VGE=VCE, IC = 9 mA
VGE = 0 V
5
Tj = 25 °C
Tj = 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
CE = 1200 V
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
16.0
0.84
0.73
1800
3.33
265
55
26.5
585
120
VCE = 25 V
GE = 0 V
V
VGE = - 8 V...+ 15 V
Tj = 25 °C
VCC = 600 V
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
ns
I
C = 225 A
ns
mJ
ns
V
GE = ±15 V
R
R
G on = 2
G off = 2
ns
Tj = 125 °C
Eoff
32.5
mJ
Rth(j-c)
per IGBT
0.1
K/W
GB
© by SEMIKRON
Rev. 1 – 23.03.2011
1