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RN2710JE PDF预览

RN2710JE

更新时间： 2024-09-15 11:58:59
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
6页 290K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2710JE 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.75风险等级：5.52
Is Samacsys：N其他特性：BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：120
JESD-30 代码：R-PDSO-F5元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：0.1 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：200 MHzBase Number Matches：1

RN2710JE 数据手册

 浏览型号RN2710JE的Datasheet PDF文件第2页浏览型号RN2710JE的Datasheet PDF文件第3页浏览型号RN2710JE的Datasheet PDF文件第4页浏览型号RN2710JE的Datasheet PDF文件第5页浏览型号RN2710JE的Datasheet PDF文件第6页 
RN2710JE,RN2711JE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2710JE, RN2711JE  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
• Two devices are incorporated into an Extreme-Super-Mini (5-pin)  
package.  
• Incorporating a bias resistor into a transistor reduces parts count.  
• Reducing the parts count enables the manufacture of ever more  
compact  
equipment and lowers assembly cost.  
• A wide range of resistor values are available for use in various circuit  
designs.  
• Complementary to RN1710JE, RN1711JE  
1.BASE1  
2.EMITTER  
3.BASE2  
4.COLLECTOR2  
5.COLLECTOR1  
(B1)  
(E)  
(B2)  
(C2)  
(C1)  
Equivalent Circuit and Bias Resistor Values  
C
R1  
JEDEC  
JEITA  
―
B
―
TOSHIBA  
2-2P1D  
E
Weight: 0.003g (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
5
4
V
CBO  
V
CEO  
V
EBO  
−50  
−50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Q1  
Q2  
−5  
V
Collector current  
I
−100  
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
C
1
2
3
T
150  
j
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1:  
Total rating  
1
2007-11-01  
123456

中文翻译

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